PURPOSE: To obtain a thin film of diamondlike or amorphous carbon having satisfactory characteristics by a low temp. process by carrying out sputtering on a substrate with graphite as a target in a gaseous flon-H 2 mixture having a specified mixing ratio under a specified pressure.
CONSTITUTION: A gaseous flon-H 2 mixture contg. 1W100ppm flon is introduced into a vacuum vessel so as to regulate the pressure to 0.7W665Pa. A substrate and a target electrode of graphite are placed in the vessel and a thin carbon film is formed on the substrate by reactive sputtering.