• Inventors:
  • Assignees:
  • Publication Date: December 31, 1969
  • Publication Number:

Abstract

Claims

Description

Topics

Download Full PDF Version (Non-Commercial Use)

Patent Citations (0)

    Publication numberPublication dateAssigneeTitle

NO-Patent Citations (0)

    Title

Cited By (22)

    Publication numberPublication dateAssigneeTitle
    US-2013316488-A1November 28, 2013International Business Machines CorporationRemoval of stressor layer from a spalled layer and method of making a bifacial solar cell using the same
    US-2014034699-A1February 06, 2014King Abdulaziz City For Science And Technology, International Business Machines CorporationMethod for improving quality of spalled material layers
    US-2015303247-A1October 22, 2015SoitecMethod for fabricating a structure
    US-8518807-B1August 27, 2013International Business Machines CorporationRadiation hardened SOI structure and method of making same
    US-8610212-B2December 17, 2013International Business Machines CorporationSemiconductor active matrix on buried insulator
    US-8841177-B2September 23, 2014International Business Machines CorporationCo-integration of elemental semiconductor devices and compound semiconductor devices
    US-8916450-B2December 23, 2014International Business Machines Corporation, King Abdulaziz City For Science And TechnologyMethod for improving quality of spalled material layers
    US-8936961-B2January 20, 2015International Business Machines CorporationRemoval of stressor layer from a spalled layer and method of making a bifacial solar cell using the same
    US-8946054-B2February 03, 2015International Business Machines CorporationCrack control for substrate separation
    US-8975635-B2March 10, 2015International Business Machines CorporationCo-integration of elemental semiconductor devices and compound semiconductor devices
    US-9040432-B2May 26, 2015International Business Machines CorporationMethod for facilitating crack initiation during controlled substrate spalling
    US-9041167-B2May 26, 2015International Business Machines CorporationRadiation hardened SOI structure and method of making same
    US-9275867-B2March 01, 2016International Business Machines Corporation, King Abdulaziz City For Science And TechnologyMethod for improving quality of spalled material layers
    US-9368407-B2June 14, 2016GlobalFoundries, Inc.Crack control for substrate separation
    US-9515068-B1December 06, 2016Hrl Laboratories, LlcMonolithic integration of GaN and InP components
    US-9543195-B1January 10, 2017United Microelectronics Corp.Semiconductor process
    US-9564335-B2February 07, 2017International Business Machines Corporation, King Abdulaziz City For Science And TechnologyMethod for improving quality of spalled material layers
    US-9578736-B2February 21, 2017International Business Machines Corporation, King Abdulaziz City For Science And TechnologyPatterned metallization handle layer for controlled spalling
    US-9653536-B2May 16, 2017SoitecMethod for fabricating a structure
    US-9679772-B2June 13, 2017International Business Machines Corporation, Azur Space Solar Power GmbhMethod for handling thin brittle films
    US-9691761-B1June 27, 2017Hrl Laboratories, LlcMonolithic integration of GaN and InP components
    US-9713250-B2July 18, 2017International Business Machines Corporation, King Abdulaziz City For Science And TechnologyPatterned metallization handle layer for controlled spalling